AP65SL130AI Datasheet, PDF (3/6 Pages) Advanced Power Electronics Corp. – Fast Switching Characteristic

AP65SL130AI
80
T _C =25 ^o C
60
40
10V
9 .0V
8 .0V
7 .0V
40
T _C =150 ^o C
30
I_D3,4
20
10V
9.0V
0.37Ω
8.0V
7.0V
6.0V
20
V _G = 6 .0V
0
0
8
16
24
32
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
V _G =5.0V
0
0
8
16
24
32
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
140
I _D =9.6A
T _C =25 ^o C
130
120
.
110
100
5
6
7
8
9
10
V _GS Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
20
15
3.4
I _D =9.6A
3 _{V G =10V}
2.6
2.2
1.8
1.4
1
0.6
0.2
-100
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
I _D =250uA
1.5
10
1
T _j = 150 ^o C
T _j = 25 ^o C
5
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
V _SD (V)
Fig 5. Forward Characteristic of
Reverse Diode
0
-100
-50
0
50
100
150
T _j , Junction Temperature ( ^o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3