AP4959GM_14 Datasheet, PDF (4/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement

AP4959GM
14
12
I _D = -4 A
V _DS = - 1 2 V
10
8
6
4
2
0
0
10
20
30
40
Q _G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
100
10
1
0.1
T _A =25 ^o C
Single Pulse
1ms
10ms
100ms
1s
DC
0.01
0.1
1
10
100
-V _DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
12
V _DS =-5V
9
6
T _j =25 ^o C
T _j =150 ^o C
3
0
0
0.5
1
1.5
2
2.5
3
-V _GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
f=1.0MHz
10000
1000
C _iss
C _oss
C _rss
100
1
5
9
13
17
-V _DS , Drain-to-Source Voltage (V)
Fig 8. Typical Capacitance Characteristics
1
Duty factor=0.5
0.1
0.01
0.001
0.0001
0.2
0.1
0.05
0.02
0.01
Single Pulse
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=135^oC/W
0.001
0.01
0.1
1
10
t , Pulse Width (s)
100
1000
Fig 10. Effective Transient Thermal Impedance
V_G
-4.5V
Q_GS
Q_G
Q_GD
Charge
Q
Fig 12. Gate Charge Waveform
4