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AP4959GM_14 Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement | |||
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Advanced Power
Electronics Corp.
AP4959GM
RoHS-compliant Product
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
â¼ Lower Turn-on Voltage
â¼ Simple Drive Requirement
â¼ Dual P MOSFET Package
Description
D2
D2
D1
D1
SO-8
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, lower on-resistance and
cost-effectiveness.
G2
S2
G1
S1
G1
BVDSS
RDS(ON)
ID
D1
G2
S1
-16V
65mΩ
-4.7A
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient3
Rating
-16
±8
-4.7
-3.8
-20
2
0.016
-55 to 150
-55 to 150
Value
62.5
Units
V
V
A
A
A
W
W/â
â
â
Unit
â/W
Data and specifications subject to change without notice
1
200803202
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