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| AP4959GM_14 Datasheet, PDF (2/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement | |||
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AP4959GM
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ÎBVDSS/ÎTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25â, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-4.5V, ID=-4A
VGS=-2.5V, ID=-3A
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=-1.8V, ID=-1A
VDS=VGS, ID=-250uA
VDS=-5V, ID=-4A
VDS=-16V, VGS=0V
VDS=-12V, VGS=0V
VGS=±8V
ID=-4A
VDS=-12V
VGS=-4.5V
VDS=-10V
ID=-1A
RG=3.3Ω,VGS=-5V
RD=10Ω
VGS=0V
VDS=-15V
f=1.0MHz
-16 -
-
V
- -0.01 - V/â
-
- 65 mΩ
-
- 75 mΩ
-
- 100 mΩ
-
- -1.0 V
- 10 -
S
-
- -1 uA
-
- -25 uA
-
- ±100 nA
- 13 20 nC
-
2
- nC
-
4
- nC
- 11 - ns
- 19 - ns
- 38 - ns
- 22 - ns
- 920 1780 pF
- 175 - pF
- 150 - pF
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage2
Test Conditions
IS=-1.7A, VGS=0V
Min. Typ. Max. Units
-
- -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135 â/W when mounted on min. copper pad.
THIS PRODUCT IS AN ELECTROSTATIC SENSITIVE, PLEASE HANDLE WITH CAUTION.
THIS PRODUCT HAS BEEN QUALIFIED FOR CONSUMER MARKET. APPLICATIONS OR USES AS CRITERIAL COMPONENT IN LIFE SUPPORT
DEVICE OR SYSTEM ARE NOT AUTHORIZED.
2
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