AP6800GEO Datasheet, PDF (3/4 Pages) Advanced Power Electronics Corp. – Low on-resistance, Optimal DC/DC battery application

40
T _A =25 ^o C
4.5V
3.5V
3.0V
30
2.5V
20
V _G =2.0V
10
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
70
I _D = 4A
T _A =25 ^o C
40
10
0
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
5
4
T _j =150 ^o C
T _j =25 ^o C
3
2
1
0
0
0.2
0.4
0.6
0.8
1
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP6800GEO
40
T _A =150 ^o C
4.5V
3.5V
3.0V
30
2.5V
20
V _G =2.0V
10
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
1.9
I _D = 6A
V _G = 4.5V
1.5
1.1
0.7
0.3
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
1.6
1.2
0.8
0.4
200109061-1/4
0
-50
0
50
100
150
T _j , Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4