AP6800GEO Datasheet, PDF (1/4 Pages) Advanced Power Electronics Corp. – Low on-resistance, Optimal DC/DC battery application

Advanced Power
Electronics Corp.
AP6800GEO
Pb Free Plating Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low on-resistance
▼ Capable of 2.5V gate drive
▼ Optimal DC/DC battery application
▼ RoHS compliant
G2
S2
S2
D2
TSSOP-8
G1
S1
S1
D1
BV_DSS
R_DS(ON)
I_D
20V
20mΩ
6
Description
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1
D2
G1
G2
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
Drain-Source Voltage
Gate-Source Voltage
Drain Current³, V_GS @ 4.5V
Drain Current³, V_GS @ 4.5V
Pulsed Drain Current¹
P_D@T_A=25℃
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Parameter
Rthj-a
Thermal Resistance Junction-ambient³
Rating
20
±10
6.0
4.7
30
1
0.008
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
125
Unit
℃/W
Data and specifications subject to change without notice
200109061-1/4