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AP6800GEO Datasheet, PDF (2/4 Pages) Advanced Power Electronics Corp. – Low on-resistance, Optimal DC/DC battery application
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AP6800GEO
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Rg
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A
Gate Threshold Voltage
VGS=4V, ID=4A
VGS=2.5V, ID=2A
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
VDS=10V, ID=6A
VDS=20V, VGS=0V
VDS=16V ,VGS=0V
VGS=±10V
ID=6A
VDS=15V
VGS=4.5V
VDS=10V
ID=1A
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RG=3.3Ω,VGS=5V
RD=10Ω
VGS=0V
VDS=20V
f=1.0MHz
Gate Resistance
f=1.0MHz
20 -
-
V
- 0.02 - V/℃
-
- 20 mΩ
-
- 21 mΩ
-
- 25 mΩ
0.5 - 1.2 V
-
6
-
S
-
-
1 uA
-
- 25 uA
-
- ±30 uA
- 23.4 37 nC
- 2.5 - nC
- 11.1 - nC
- 8.2 - ns
- 18.4 - ns
- 19.6 -
ns
- 58
-
ns
- 580 930 pF
- 315 - pF
- 165 - pF
-
2
3
Ω
Source-Drain Diode
Symbol
VSD
trr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Qrr
Reverse Recovery Charge
Test Conditions
IS=0.84A, VGS=0V
IS=6A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.2 V
-
40
-
ns
-
39
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 208℃/W when mounted on Min. copper pad.
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