AP60T03GI Datasheet, PDF (3/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement Low Gate Charge

160
T _C =25 ^o C
120
80
40
10V
8.0V
6.0V
5.0V
V _G =4.0V
0
0
1
2
3
4
V _DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
90
I _D = 15 A
T _C =25 ^o C
70
50
30
10
2
4
6
8
10
V _GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
50
40
T _j =175 ^o C
T _j =25 ^o C
30
20
10
0
0
0.4
0.8
1.2
1.6
V _SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
AP60T03GI
100
T _C =175 ^o C
80
60
40
20
10V
8.0V
6.0V
5.0V
V _G =4.0V
0
0
1
2
3
4
5
V _DS , Drain-to-Source Voltage (V)
Fig 2. Typical Output Characteristics
2.0
I _D =20A
V _G =10V
1.6
1.2
0.8
0.31
t_rr
0.4
-50
0
50
100
Q ¹⁵⁰
200
rr
T _j , Junction Temperature ( ^o C)
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.6
2.2
1.8
1.4
1
0.6
-50
0
50
100
150
200
T _j ,Junction Temperature ( ^o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3