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AP60T03GI Datasheet, PDF (2/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement Low Gate Charge
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AP60T03GI
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance2
Gate Threshold Voltage
Forward Transconductance2
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V, ID=250uA
VGS=10V, ID=20A
VGS=4.5V, ID=15A
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VDS=24V, VGS=0V
VGS= ±20V
ID=20A
VDS=20V
VGS=4.5V
VDS=15V
ID=20A
RG=3.3Ω,VGS=10V
RD=0.75Ω
VGS=0V
VDS=25V
f=1.0MHz
30 -
-
V
-
- 12 mΩ
-
- 25 mΩ
1
-
3V
- 25 -
S
-
- 10 uA
-
- ±100 nA
- 12 20 nC
-
4
- nC
-
7
- nC
-
9
- ns
- 58 - ns
- 18 - ns
-
6
- ns
- 1135 1820 pF
- 200 - pF
- 135 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=20A, VGS=0V
IS=20A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
-
- 1.3 V
- 24 - ns
- 16 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
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