AP60T03GI Datasheet, PDF (1/5 Pages) Advanced Power Electronics Corp. – Simple Drive Requirement Low Gate Charge

Advanced Power
Electronics Corp.
AP60T03GI
RoHS-compliant Product
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Low Gate Charge
▼ Fast Switching
G
S
Description
Advanced Power MOSFETs from APEC provide the designer with
the best combination of fast switching, ruggedized device design,
low on-resistance and cost-effectiveness.
The TO-220CFM isolation package is widely preferred for
commercial-industrial through hole applications.
BV_DSS
R_DS(ON)
I_D
30V
12mΩ
45A
GD _S
TO-220CFM(I)
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_C=25℃
I_D@T_C=100℃
I_DM
P_D@T_C=25℃
T_STG
T_J
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
Pulsed Drain Current¹
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
45
32
120
37.5
-55 to 175
-55 to 175
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Value
4.0
65
Units
V
V
A
A
A
W
℃
℃
Units
℃/W
℃/W
Data and specifications subject to change without notice
1
200805051