AP50G60W-HF_14 Datasheet, PDF (3/3 Pages) Advanced Power Electronics Corp. – High Speed Switching

400
300
200
100
0
0
50
100
150
200
Junction Temperature ( ^o C )
Fig 7. Power Dissipation vs. Junction
Temperature
20
T _C =25 ^o C
15
10
5
I _C = 50 A
33 A
15 A
0
0
4
8
12
16
20
V _GE , Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. V_GE
160
120
80
T _j =150 ^o C
T _j =25 ^o C
40
0
0
4
8
12
16
V _GE , Gate - Emitter Voltage (V)
Fig 11. Transfer Characteristics
AP50G60W-HF
1
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
PDM
t
T
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 8. Effective Transient Thermal
Impedance, Junction-to-Case (IGBT)
20
T _C = 150 ^o C
15
10
5
I _C = 50 A
33 A
15 A
0
0
4
8
12
16
20
V _GE , Gate-Emitter Voltage(V)
Fig 10. Saturation Voltage vs. V_GE
1000
100
10us
10
100us
1ms
1
10ms
0.1
T _c =25 ^o C
Single Pulse
0.01
1
10
100
V _CE ,Collector - Emitter Voltage(V)
DC
1000
Fig 12. SOA Characteristics
3