AP50G60W-HF_14 Datasheet, PDF (2/3 Pages) Advanced Power Electronics Corp. – High Speed Switching

AP50G60W-HF
200
T _C =25 ^o C
20V
18V
160
15V
120
12V
80
V _GE =10V
40
0
0
10
20
30
V _CE , Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
160
V _GE =15V
120
T _C =25 ^o C
80
T _C =150 ^o C
40
0
0
2
4
6
8
V _CE , Collector-Emitter Voltage (V)
Fig 3. Typical Saturation Voltage
Characteristics
2
I _C = 1mA
1.6
1.2
0.8
0.4
0
-50
0
50
100
150
Junction Temperature ( ^o C )
Fig 5. Gate Threshold Voltage
v.s. Junction Temperature
20
I _C =33A
16
V _CC =300V
V _CC =400V
12
V _CC =500V
8
4
0
0
20
40
60
80
Q _G , Gate Charge (nC)
Fig 2. Gate Charge Characterisitics
5
V _GE = 15 V
4
3
2
I _C = 50 A
I _C =40A
1
0
40
80
120
160
Junction Temperature ( ^o C)
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
3000
2000
C _ies
1000
-
-
C _oes
0
1
5
9
13
17
21
25
C ₂₉
res₃₃
V _CE , Collector-Emitter Voltage (V)
Fig 6. Typical Capacitance Characterisitics
2