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AP50G60W-HF_14 Datasheet, PDF (1/3 Pages) Advanced Power Electronics Corp. – High Speed Switching
Advanced Power
Electronics Corp.
AP50G60W-HF
Halogen-Free Product
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR
Features
▼ High Speed Switching
▼ Low Saturation Voltage
VCE(sat),Typ.=2.5V@IC=40A
▼ RoHS Compliant & Halogen-Free
G
C
E
C
VCES
IC
TO-3P
G
600V
40A
C
Absolute Maximum Ratings
Symbol
Parameter
VCES
VGE
IC@TC=25oC
IC@TC=100oC
ICM
PD@TC=25oC
TSTG
TJ
TL
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
Rating
600
+30
75
40
150
277
-55 to 150
150
300
E
Units
V
V
A
A
A
W
oC
oC
oC
Notes:
1.Pulse width limited by max. junction temperature .
Thermal Data
Symbol
Parameter
Rthj-c
Thermal Resistance Junction-Case
Rthj-a
Thermal Resistance Junction-Ambient
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
IGES
ICES
VCE(sat)
VGE(th)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Cies
Coes
Cres
Parameter
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Test Conditions
VGE=+30V, VCE=0V
VCE=600V, VGE=0V
VGE=15V, IC=40A
VGE=15V, IC=75A
VCE=VGE, IC=1mA
IC=33A
VCE=400V
VGE=15V
VCE=390V,
Ic=33A,
VGE=15V,
RG=5Ω,
Inductive Load
VGE=0V
VCE=30V
f=1.0MHz
Value
0.45
40
Units
oC/W
oC/W
Min. Typ. Max. Units
-
- +100 nA
-
- 500 uA
- 2.5 2.9 V
- 3.3 -
V
3
-
7
V
-
66 105 nC
-
12
-
nC
-
36
-
nC
-
15
-
ns
-
80
-
ns
-
43
-
ns
- 160 320 ns
- 1.5 - mJ
- 0.75 - mJ
- 1400 2240 pF
- 160 - pF
-
20
-
pF
Data and specifications subject to change without notice
1
201211301
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