R11-0869 Datasheet, PDF (12/16 Pages) A-Data Technology – AD3V1600W8G11 DDR3-1600(CL11) 240-Pin VLP R-DIMM 8GB(1024Mx72-bits)

AD3V1600W8G11
DDR3-1600(CL11) 240-Pin VLP R-DIMM
8GB(1024Mx 72-bits)
IDD Specification：
Symbol
Condition
Typical
Unit
IDD0
Operating One Bank Active-Precharge Current
855
mA
IDD1
Operating One Bank Active-Read-Precharge Current
963
mA
IDD2P0
Precharge Power-Down Current Slow Exit
360
mA
IDD2P1
Precharge Power-Down Current Fast Exit
666
mA
IDD2Q
Precharge Quiet Standby Current
846
mA
IDD2N
Precharge Standby Current
900
mA
IDD3P
Active Power-Down Current
1134
mA
IDD3N
Active Standby Current
1116
mA
IDD4W
Operating Burst Write Current
1665
mA
IDD4R
Operating Burst Read Current
2800
mA
IDD5B
Burst Refresh Current
2160
mA
IDD6
Self Refresh Current: Normal Temperature Range
396
mA
IDD7
Operating Bank Interleave Read Current
2790
mA
IDD8
RESET Low Current
396
mA
Note: IDD current measure method and detail patterns are described on DDR3 component datasheet. Only for reference.
Speed Bins and CL,tRCD,tRP,tRC and tRAS for Corresponding Bin：
Speed
Bin(CL-tRCD-tRP)
Parameter
CL
tRCD
tRC
tRRD
tCK
tRAS
tRP
tRFC
DDR3-1600
11-11-11
Min
11
13.125
48.125
6
1.25
35
13.125
300
Units
tCK
ns
ns
ns
ns
ns
ns
ns
12