W39F010 Datasheet, PDF (3/33 Pages) Winbond – 128K × 8 CMOS FLASH MEMORY

W39F010
1. GENERAL DESCRIPTION
The W39F010 is a 1Mbit, 5-volt only CMOS flash memory organized as 128K × 8 bits. For flexible
erase capability, the 1Mbits of data are divided into 32 small even pages with 4 Kbytes. The byte-wide
(× 8) data appears on DQ7 − DQ0. The device can be programmed and erased in-system with a
standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W39F010
results in fast program/erase operations with extremely low current consumption (compared to other
comparable 5-volt flash memory products). The device can also be programmed and erased by using
standard EPROM programmers.
2. FEATURES
y Single 5-volt operations
− 5-volt Read
− 5-volt Erase
− 5-volt Program
y Fast Program operation:
− Byte-by-Byte programming: 50 μS (max.)
y Fast Erase operation:
− Chip Erase cycle time: 100 mS (max.)
− Page Erase cycle time: 25 mS (max.)
y Read access time: 70/90 nS
y 32 even pages with 4K bytes
y Any individual page can be erased
y Hardware protection:
− Optional 16K byte Top/Bottom Boot Block with lockout protection
y Flexible 4K-page size can be used as Parameter Blocks
y Typical program/erase cycles:
− 1K/10K
y Twenty-year data retention
y Low power consumption
− Active current: 15 mA (typ.)
− Standby current: 15 μA (typ.)
y End of program detection
− Software method: Toggle bit/Data polling
y TTL compatible I/O
y JEDEC standard byte-wide pinouts
y Available packages: 32-pin 600 mil DIP, 32-pin PLCC, 32- pin STSOP (8 x 14 mm) and 32- pin
TSOP
Publication Release Date: December 26, 2005
-3-
Revision A4