1E1G Datasheet, PDF (2/2 Pages) Diode Semiconductor Korea – ULTRA FAST RECTIFIERS

Z ibo Seno Electronic Engineering Co., Ltd.
1.0
0.8
0.6
0.4
0.2
Single phase half-wave
60 Hz resistive or inductive load
0
25 50 75 100 125 150 175 200
T_A, AMBIENT TEMPERATURE (°C)
Fig. 1 Forward Derating Curve
30
Pulse Width 8.3ms
Single Half-Sine-Wave
(JEDEC Method)
20
10
1E1G – 1E8G
10
1E1G-1E4G
1E5G-1E6G
2.0
1E7G-1E8G
1.0
0.01
0.6
T_j = 25°C
Pulse width = 300µs
0.8
1.0
1.2
1.4
V_F, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
100
T_j = 25°C
f = 1MHz
10
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Peak Forward Surge Current
50Ω NI (Non-inductive)
10Ω NI
(+)
50V DC
Approx
(-)
Device
Under
Test
1.0Ω
NI
Oscilloscope
(Note 1)
(-)
Pulse
Generator
(Note 2)
(+)
1
1
+0.5A
10
100
V_R, REVERSE VOLTAGE (V)
Fig. 4 Typical Junction Capacitance
t_rr
0A
-0.25A
Notes:
1. Rise Time = 7.0ns max. Input Impedance = 1.0MΩ, 22pF.
2. Rise Time = 10ns max. Input Impedance = 50Ω.
-1.0A
Set time base for 5/10ns/cm
Fig. 5 Reverse Recovery Time Characteristic and Test Circuit
1E1G – 1E8G
2 of 2
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