1E1G Datasheet, PDF (1/2 Pages) Diode Semiconductor Korea – ULTRA FAST RECTIFIERS

Z ibo Seno Electronic Engineering Co., Ltd.
1E1G – 1E8G
1.0A SUPERFAST GLASS PASSVITED RECTIFIER
Features
! Glass Passivated Die Construction
! Low Forward Voltage Drop
! High Current Capability
! High Reliability
! High Surge Current Capability
A
B
A
Mechanical Data
! Case: R-1, Molded Plastic
! Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
! Polarity: Cathode Band
! Weight: 0.181 grams (approx.)
! Mounting Position: Any
! Marking: Type Number
! Lead Free: For RoHS / Lead Free Version
C
D
R-1
Dim
Min
Max
A
20.0
—
B
2.90
3.50
C
0.53
0.64
D
2.20
2.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Symbol SF11G SF12G SF13G SF14G SF15G SF16G SF17G SF18G Unit
Characteristic
Symbol 1H1G 1H2G 1H3G 1H4G 1H5G 1H6G 1H7G 1H8 G Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
50
VR
RMS Reverse Voltage
VR(RMS)
35
Average Rectified Output Current
(Note 1)
@T_A = 55°C
IO
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
IFSM
rated load (JEDEC Method)
Forward Voltage
@I_F = 1.0A
VFM
Peak Reverse Current
@T_A = 25°C
At Rated DC Blocking Voltage @T_A = 100°C
IRM
Reverse Recovery Time (Note 2)
trr
Typical Junction Capacitance (Note 3)
Cj
Operating Temperature Range
Tj
Storage Temperature Range
TSTG
100 150 200 300 400 500 600 V
70 105 140 210 280 350 420 V
1.0
A
25
A
0.95
1.30
1.70
V
5.0
100
µA
35
nS
20
10
pF
-65 to +150
°C
-65 to +150
°C
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 5.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1E1G – 1E8G
1 of 2
www.senocn.com