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CJLJF3117P Datasheet, PDF (4/4 Pages) ZP Semiconductor – P-channel MOSFET and Schottky Barrier Diode
CJLJF3117P
Schottky Characteristics
Forward Characteristics
2000
0.01
1000
100
Ta=100℃
10
1
Ta=25℃
1E-3
1E-4
1E-5
0.1
1E-6
Reverse Characteristics
Ta=100℃
Ta=25℃
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
FORWARD VOLTAGE VF (V)
1E-7
0
5
10
15
20
25
30
REVERSE VOLTAGE VR (V)
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