CJLJF3117P Datasheet, PDF (1/4 Pages) ZP Semiconductor – P-channel MOSFET and Schottky Barrier Diode

CJLJF3117P
DFNWB2×2-6L-A Power Management MOSFETs-Schottky
CJLJF3117P P-channel MOSFET and Schottky Barrier Diode
FEATURES
z Independent Pinout to Each Device to Ease Circuit Design
z High Current Schottky Diode
z Including a CJ2301 MOSFET and a RB551V-30 Schottky
(independently) in a package
APPLICATIONS
z Optimized for Portable Applications Like Cell Phones,Digital
Cameras,Media Players,etc
z DC-DC Buck Circuits
z Li-ion Battery Applications
z Color Display and Camera Flash Regulators
MARKING:
DFNWB2×2-6L-A
K GS
6
5
4
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
P-MOSFET
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Continuous Drain Current
I_DM*
Pulse Drain Current
Schottky Barrier Diode
V_RRM
V_R
I_O
Peak Repetitive Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Power Dissipation, Temperature and Thermal Resistance
P_D
Power Dissipation
R_θJA
Thermal Resistance from Junction to Ambient
T_j
Junction Temperature
T_stg
Storage Temperature
T_L
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature.
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1
2
3
A
D
Value
-20
±8
-3.3
-10
30
30
2
0.75
83.3
150
-55~+150
260
Unit
V
V
A
A
V
V
A
W
℃/W
℃
℃
℃
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