SI9926 Datasheet, PDF (3/5 Pages) ZP Semiconductor – Dual N-Channel Enhancement Mode MOSFET

SI9926
Typical Characteristics
0.04
0.035
4.5V/6A
0.03
0.025
0.02
0.029
0.027
0.025
0.023
0.021
0.019
0.017
VGS=2.5V
VGS=4.5V
0.015
0
50
100
150
Tj.Junction Temperature(℃)
0.015
0
5
10
15
20
ID-Drain Current(A)
Figure 5．On-Resistance Variation
with Temperature
Figure 6．On-Resistance vs. Drain Current
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
ID=6A
ID=5.2A
0.01
0
0
2
4
6
8
10
VGS,Gate-to-Source Voltage(Volts)
Figure 7 ． On-Resistance vs. Gate-to-Source
Voltage
Voltage
100
10
Tj＝150℃
1
Tj＝25℃
0.1
0.1
0.6
1.1
1.6
VSD-Source-to-Drain Voltage(V)
Figure 8 ． Source-Drain Diode Forward
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