SI9926 Datasheet, PDF (2/5 Pages) ZP Semiconductor – Dual N-Channel Enhancement Mode MOSFET

SI9926
Typical Characteristics
20
18
VGS=2.5，3.5，4.5V
16
14
12
10
8
VGS=2.0V
6
4
2
VGS=1.5V
0
0
1
2
3
VDS,Drain-to-Source Voltage(Volts)
Figure 1．Output Characteristics
35
30
25
20
15
Tj＝125℃
10
Tj＝25℃
5
0
0
1
2
3
VGS,Gate-to-Source Voltage(Volts)
Figure 2．Transfer Characteristics
26.5 _ID=250uA
26
25.5
25
24.5
24
0
50
100
150
Tj,Junction Temperature(℃)
Figure 3．Breakdown Voltage Variation
with Temperature
0.8
ID=250uA
0.7
0.6
0.5
0.4
0.3
0.2
0
50
100
150
Tj.Junction Temperature(℃)
Figure 4．Gate Threshold Variation
with Temperature
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