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| PMV56XN Datasheet, PDF (3/3 Pages) NXP Semiconductors – UTrenchMOS extremely low level FET | |||
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PMV56XN
µTrenchMOS⢠extremely low level FET
5. Characteristics
Table 4: Characteristics
Tj = 25 °C unless otherwise speciï¬ed.
Symbol Parameter
Conditions
Static characteristics
V(BR)DSS drain-source breakdown voltage
VGS(th) gate-source threshold voltage
IDSS
drain-source leakage current
IGSS
RDSon
gate-source leakage current
drain-source on-state resistance
Dynamic characteristics
ID = 10 µA; VGS = 0 V
ID = 1 mA; VDS = VGS; Figure 9
VDS = 20 V; VGS = 0 V
Tj = 25 °C
Tj = 55 °C
VGS = ±8 V; VDS = 0 V
VGS = 4.5 V; ID = 3.6 A; Figure 7 and 8
VGS = 2.5 V; ID = 3.1 A; Figure 7 and 8
Qg(tot) total gate charge
Qgs
gate-source charge
Qgd
gate-drain (Miller) charge
Ciss
input capacitance
Coss
output capacitance
Crss
reverse transfer capacitance
td(on)
turn-on delay time
tr
rise time
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VDD = 10 V; VGS = 4.5 V; ID = 3.6 A; Figure 13
VGS = 0 V; VDS = 10 V; f = 1 MHz; Figure 11
VDD = 10 V; RL = 5.5 â¦; VGS = 4.5 V; RG = 6 â¦
VSD
source-drain (diode forward) voltage IS = 1.6 A; VGS = 0 V; Figure 12
Min Typ Max Unit
20 -
-
V
0.65 -
-
V
-
0.01 1.0 µA
-
-
10 µA
-
10 100 nA
-
56 85 mâ¦
-
77 115 mâ¦
-
5.4 -
nC
-
0.65 -
nC
-
1.6 -
nC
-
230 -
pF
-
125 -
pF
-
80 -
pF
-
12 -
ns
-
23 -
ns
-
50 -
ns
-
34 -
ns
-
0.8 1.2 V
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