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PMV56XN Datasheet, PDF (1/3 Pages) NXP Semiconductors – UTrenchMOS extremely low level FET | |||
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PMV56XN
µTrenchMOS⢠extremely low level FET
1. Product proï¬le
1.1 Description
N-channel enhancement mode ï¬eld-effect transistor in a plastic package using
TrenchMOS⢠technology.
1.2 Features
s TrenchMOS⢠technology
s Low threshold voltage
s Very fast switching
s Subminiature surface mount package.
1.3 Applications
s Battery management
s High-speed switch
s Low power DC-to-DC converter.
1.4 Quick reference data
s VDS ⤠20 V
s Ptot ⤠1.92 W
s ID ⤠3.76 A
s RDSon ⤠85 mâ¦
2. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT23, simpliï¬ed outline and symbol
Description
Simpliï¬ed outline
gate (g)
3
source (s)
drain (d)
1
2
Top view
MSB003
SOT23
Symbol
d
g
mbb076 s
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