CJP718 Datasheet, PDF (3/4 Pages) ZP Semiconductor – Plastic-Encapsulate Transistors

CJP718
-0.35
-0.30
-0.25
-0.20
-0.15
-0.10
-0.05
-0.00
-0
Static Characteristic
-900uA
-810uA
-720uA
-630uA
-540uA
-450uA
COMMON
EMITTER
T =25℃
a
-360uA
-270uA
-180uA
I =-90uA
B
-1
-2
-3
-4
-5
-6
COLLECTOR-EMITTER VOLTAGE V (V)
CE
-6
-5
-4
-3
-2
-1
-0
-0.0
V —— I
BE
C
V =-2V
CE
T =100oC
a
T =25 oC
a
T =-45 oC
a
-0.7
-1.4
BASE-EMITTER VOLTAGE V (V)
BE
V —— I
CEsat
C
-1
600
500
400
300
200
100
0
-0.01
h ——
FE
I
C
T =100 oC
a
V = -2V
CE
T =25 oC
a
T =-45 oC
a
-0.1
-1
-6
COLLECTOR CURRENT I (A)
C
V ——
BEsat
I
C
-1.4
β=50
-1.2
-1.0
T =-45℃
a
-0.8
-0.6
T =25℃
a
-0.4
T =100℃
a
-0.2
-1E-3
-0.01
-0.1
-1
-6
COLLECTOR CURRENT I (A)
C
-1
β=50
V —— I
CEsat
C
-0.1
β=100
-0.01
β=50
-1E-3
-1E-3
β=10
T =25℃
a
-0.01
-0.1
-1
-6
COLLECTOR CURRENT I (A)
C
T =100℃
a
T =25℃
-0.1
a
-0.01
-1E-3
T =-45℃
a
-0.01
-0.1
-1
-6
COLLECTOR CURRENT I (mA)
C
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