CJP718 Datasheet, PDF (1/4 Pages) ZP Semiconductor – Plastic-Encapsulate Transistors

CJP718
DFNWB2*2-3L Plastic-Encapsulate Transistors
CJP718 TRANSISTOR (PNP)
FEATURE
z Low Equivalent On Resistance
z Low Staturation Voltage
APPLICATIONS
z DC-DC Converters (FET Driving)
z Charging Circuits
z Power Switches
z Motor Control
MARKING:
front
Tape Drawing (Unit : mm)
back
DFNWB2*2-3L
2
3
1
COLLECTOR
3
1
BASE
2
EMITTER
Maximum ratings (T_a=25℃ unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PD
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Power Dissipation
Thermal Resistance. Junction to Ambient
Junction Temperature
Storage Temperature Range
Value
-25
-20
-7.5
-6
1
125
150
-55~+150
Unit
V
A
W
℃/W
℃
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