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| CJI02N60 Datasheet, PDF (3/3 Pages) ZP Semiconductor – N-Channel Power MOSFET | |||
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CJI02N60
3.0
Pulsed
Output Characteristics
2.5
VGS= 6Vã 8Vã10V
2.0
VGS=5.5V
1.5
1.0
VGS=5V
0.5
0.0
0
VGS=4.5V
6
12
18
24
30
DRAIN TO SOURCE VOLTAGE VDS (V)
10
Ta=25â
Pulsed
8
R
DS(ON)
ââ
I
D
6
VGS=10V
4
2
0
0.1
1
2
3
4
5
DRAIN CURRENT ID (A)
4
Pulsed
1
I
S
ââ
V
SD
0.1
Ta=100â
0.01
Ta=25â
1E-3
0.0
0.4
0.8
1.2
1.6
2.0
SOURCE TO DRAIN VOLTAGE VSD (V)
1.0
VDS=10V
Pulsed
0.5
Transfer Characteristics
Ta=25â
Ta=100â
0.0
0
1
2
3
4
5
6
7
GATE TO SOURCE VOLTAGE VGS (V)
R
DS(ON)
ââ
V
GS
30
Pulsed
ID=1A
25
20
Ta=100â
Ta=25â
15
10
5
0
2
4
6
8
10
12
GATE TO SOURCE VOLTAGE VGS (V)
Threshold Voltage
5
4
ID=250uA
3
2
1
0
25
50
75
100
125
JUNCTION TEMPERATURE TJ (â)
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