CJI02N60 Datasheet, PDF (1/3 Pages) ZP Semiconductor – N-Channel Power MOSFET

CJI02N60
TO-126 Plastic-Encapsulate MOSFETS
CJI02N60 N-Channel Power MOSFET
General Description
The high voltage MOSFET uses an advanced termination scheme
to provide enhanced voltage-blocking capability without degrading
performance over time. In addition , this advanced MOSFET is designed
to withstand high energy in avalanche and commutation modes . The
new energy efficient design also offers a drain-to-source diode with a
fast recovery time. Designed for high voltage, high speed switching
applications in power suppliers, converters and PWM motor controls ,
these devices are particularly well suited for bridge circuits where diode
speed and commutating safe operating areas are critical and offer
additional and safety margin against unexpected voltage transients.
TO-126
1. GATE
2. DRAIN
3. SOURCE
FEATURES
z Robust High Voltage Termination
z Avalanche Energy Specified
z Diode is Characterized for Use in Bridge Circuits
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Symbol
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current
I_DM
Power Dissipation
P_D
Single Pulsed Avalanche Energy*
E_AS
Thermal Resistance, Junction-to-Ambient
R θ_JA
Junction Temperature
T_J
Storage Temperature
TSTG
Maximum lead temperure for soldering purposes ,
T_L
1/8”from case for 5 seconds
*E_AS condition: T_j=25℃,V_DD=50V,L=64mH,IAS=2A,R_G=25Ω
Value
600
±20
2
8
1.25
128
100
150
-50 ~+150
260
Unit
V
A
W
mJ
℃/W
℃
℃
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