XP152A11E5MR Datasheet, PDF (2/2 Pages) Torex Semiconductor – Power MOS FET

XP152A11E5MR-G
■ELECTRICAL CHARACTERISTICS
DC Characteristics
PARAMETER
SYMBOL
CONDITIONS
Drain Cut-Off Current
Gate-Source Leak Current
Gate-Source Cut-Off Voltage
Idss
Igss
Vgs(off)
Drain-Source On-State Resistance *1 Rds(on)
Vds= -30V, Vgs= 0V
Vgs= ±20V, Vds= 0V
Id= -1mA, Vds= -10V
Id= -0.4A, Vgs= -10V
Id= -0.4A, Vgs= -4.5V
Forward Transfer Admittance *1 | Yfs |
Id= -0.4A, Vds= -10V
Body Drain Diode
Forward Voltage
Vf
*1 Effective during pulse test.
If= -0.7A, Vgs= 0V
MIN.
-
-
-1.0
-
-
-
TYP.
-
-
-
0.20
0.35
1
Ta = 25℃
MAX. UNITS
-10
μA
±10 μA
-3.0
V
0.25
Ω
0.45
Ω
-
S
-
-0.8 -1.1
V
Dynamic Characteristics
PARAMETER
Input Capacitance
Output Capacitance
Feedback Capacitance
SYMBOL
Ciss
Coss
Crss
CONDITIONS
Vds= -10V, Vgs=0V
f= 1MHz
MIN.
-
-
-
TYP.
160
120
50
Ta = 25℃
MAX. UNITS
-
pF
-
pF
-
pF
Switching Characteristics
PARAMETER
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
SYMBOL
td (on)
tr
td (off)
tf
CONDITIONS
Vgs= -5V, Id= -0.4A
Vdd= -10V
MIN.
-
-
-
-
TYP.
10
25
25
40
Ta = 25℃
MAX. UNITS
-
ns
-
ns
-
ns
-
ns
Thermal Characteristics
PARAMETER
Thermal Resistance
(Channel-Ambience)
SYMBOL
CONDITIONS
MIN.
Rth (ch-a) Implement on a ceramic PCB
-
TYP.
250
MAX. UNITS
-
℃/W
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