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XP152A11E5MR Datasheet, PDF (1/2 Pages) Torex Semiconductor – Power MOS FET | |||
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XP152A11E5MR-G
Power MOSFET
â GENERAL DESCRIPTION
The XP152A11E5MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching
characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 package makes high density mounting possible.
â APPLICATIONS
âNotebook PCs
âCellular and portable phones
âOn-board power supplies
âLi-ion battery systems
â FEATURES
Low On-State Resistance : Rds(on) = 0.25Ω@ Vgs = -10V
: Rds(on) = 0.45Ω@ Vgs = -4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: -4.5V
P-Channel Power MOSFET
DMOS Structure
Small Package
: SOT-23
Environmentally Friendly : EU RoHS Compliant, Pb Free
â PIN CONFIGURATION/
MARKING
21 1 x
Gï¼Gate
Sï¼Source
Dï¼Drain
â PRODUCT NAMES
PRODUCTS
PACKAGE ORDER UNIT
XP152A11E5MR
SOT-23
3,000/Reel
XP152A11E5MR-G(*)
SOT-23
3,000/Reel
(*) The â-Gâ suffix denotes Halogen and Antimony free as well as
being fully RoHS compliant.
* x represents production lot number.
â EQUIVALENT CIRCUIT
â ABSOLUTE MAXIMUM RATINGS
Ta = 25â
PARAMETER
SYMBOL RATINGS UNITS
Drain - Source Voltage
Vdss
-30
V
Gate - Source Voltage
Vgss
±20
V
Drain Current (DC)
Id
-0.7
A
Drain Current (Pulse)
Idp
-2.8
A
Reverse Drain Current
Idr
-0.7
A
Channel Power Dissipation * Pd
0.5
W
Channel Temperature
Tch
150
â
Storage Temperature
Tstg -55~150 â
* When implemented on a ceramic PCB
sales@zpsemi.com
www.zpsemi.com
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