CJP12N60 Datasheet, PDF (2/2 Pages) ZP Semiconductor – 6 0 0V N-Channel Power MOSFET

CJP12N60
Electrical characteristics (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Off characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =250µA
Drain-source diode forward voltage(note2)
VSD VGS = 0V, IS =12A
Zero gate voltage drain current
I_DSS
VDS =600V, VGS =0V
Gate-body leakage current, forward(note2)
I_GSSF VDS =0V, VGS =30V
Gate-body leakage current, reverse(note2)
I_GSSR VDS =0V, VGS =-30V
On characteristics (note2)
Gate-threshold voltage
VGS(th) VDS =V_GS, ID =250µA
Static drain-source on-resistance
RDS(on) VGS =10V, ID =6.0A
Dynamic characteristics (note 3)
Input capacitance
C_iss
Output capacitance
C_oss VDS =25V,VGS =0V,f =1MHz
Reverse transfer capacitance
C_rss
Switching characteristics(note3)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
V_DD=325V, R_G=4.7Ω, ID =12A
Turn-off fall time
tf
Notes :
1. L=10mH, I_AS=12 A, V_DD=50V, R_G=25Ω,Starting T_J=25℃.
2. Pulse Test : Pulse width≤300µs, duty cycle ≤2%.
3. These parameters have no way to verify.
Min Typ Max Unit
600
V
1.4
10
µA
100
nA
-100
2.0
4.0
V
0.8
Ω
1800
200
pF
25
30
90
ns
160
90
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