CJP12N60 Datasheet, PDF (1/2 Pages) ZP Semiconductor – 6 0 0V N-Channel Power MOSFET

CJP12N60
TO-220-3L Plastic-Encapsulate MOSFETS
CJP12N60 600V N-Channel Power MOSFET
General Description
This advanced technology has been especially tailored to minimize
on-state resistance, provide superior switching performance, and withistand
high energy pulse in the avalanche and commutation mode. These devices
are well suited for high efficiency switch mode power supply.
FEATURE
z Low C_rss
z Fast switching
z Improved dv/dt capability
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Maximum ratings (T_a=25℃ unless otherwise noted)
TO-220-3L
1. GATE
2. DRAIN
3. SOURCE
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
E_AS
P_D
R_θJA
T_J
T_STG
Value
600
±30
12
790
2
62.5
150
-55 ~+150
Units
V
A
mJ
W
℃
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