CJCD2007 Datasheet, PDF (2/2 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJCD2007
ELECTRICAL CHARACTERISTICS (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR) DSS VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =16V,VGS = 0V
Gate-body leakage current
VGS =±4.5V, VDS = 0V
IGSS
VGS =±8V, VDS = 0V
Gate threshold voltage (note 1)
VGS(th) VDS =V_GS, ID =250µA
VGS =10V, ID =7A
VGS =4.5V, ID =6.6A
Drain-source on-resistance (note 1)
RDS(on) VGS =3.8V, ID =6A
VGS =2.5V, ID =5.5A
VGS =1.8V, ID =5A
Forward tranconductance (note 1)
gFS
VDS =5V, ID =7A
Diode forward voltage(note 1)
V_SD
I_S=1A, VGS = 0V
DYNAMIC PARAMETERS (note 2)
Input Capacitance
Output Capacitance
C_iss
C_oss
VDS =10V,VGS =0V,f =1MHz
Reverse Transfer Capacitance
C_rss
Total gate charge
Q_g
Gate-source charge
Q_gs
VDS =10V,VGS =4.5V,ID =7A
Gate-drain charge
Q_gd
SWITCHING PARAMETERS(note 2)
Turn-on delay time
td(on)
Turn-on rise time
Turn-off delay time
tr
td(off)
V_GS=5V,V_DD=10V,
R_L=1.35Ω,R_GEN=3Ω
Turn-off fall time
tf
Notes :
1. Pulse Test : Pulse width≤300µs, duty cycle≤0.5%.
2. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
20
V
1
µA
±1
µA
±10 µA
0.4
1
V
20
mΩ
22
mΩ
24
mΩ
26
mΩ
35
mΩ
9
S
1
V
1150
pF
185
pF
145
pF
15
nC
0.8
nC
3.2
nC
6
ns
13
ns
52
ns
16
ns
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