CJCD2007 Datasheet, PDF (1/2 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

CJCD2007
DFNWB2×3-6L-C Plastic-Encapsulate MOSFETS
CJCD2007 Dual N-Channel MOSFET
DFNWB2×3-6L-C
DESCRIPTION
The CJCD2007 uses advanced trench technology to provide
excellent R_DS(ON) and low gate charge. It is ESD protected. This device is
suitable for use as a uni-directional or bi-directional load switch,facilitated
by its common-drain configuration.
MARKING:
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature.
Symbol
V_DS
V_GS
I_D
I_DM *
R_θJA
T_j
T_stg
T_L
Value
20
±12
7
30
125
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
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