 English |
|
|
|
|
|
|
|
| CJ3139KDW Datasheet, PDF (2/2 Pages) ZP Semiconductor – SOT-363 Plastic-Encapsulate MOSFETS | |||
| |||
| ◁ |
CJ3139KDW
Electrical characteristics (Ta=25â unless otherwise noted)
Parameter
Symbol
Test Condition
On/Off States
Drain-Source Breakdown Voltage
V(BR)DSS VGS = 0V, ID =-250µA
Gate-Threshold Voltage(note 3)
VGS(th) VDS =VGS, ID =-250µA
Gate-Body Leakage Current
IGSS VDS =0V, VGS =±12V
Zero Gate Voltage Drain Current
IDSS
VDS =-20V, VGS =0V
VGS =-4.5V, ID =-1A
Drain-Source On-State Resistance(note 3)
RDS(on) VGS =-2.5V, ID =-800mA
VGS =-1.8V, ID =-500mA
Forward Transconductance
gFS
VDS =-10V, ID =-540mA
Dynamic Characteristics(note 4)
Input Capacitance
Ciss
Output Capacitance
Coss VDS =-16V,VGS =0V,f =1MHz
Reverse Transfer Capacitance
Crss
Switching Times (note 4)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
tr
td(off)
tf
VDD=-10V,
ID=-200mA,
VGS=-4.5V,RG=10â¦
Drain-Source Diode Characteristics
Drain-Source Diode Forward Voltage (note 3)
VSD IS=-0.5A, VGS = 0V
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. This test is performed with no heat sink at Ta=25â.
3. Pulse Test : Pulse Widthâ¤300µs, Duty Cycleâ¤0.5%.
4. These parameters have no way to verify.
Min Typ Max Unit
-20
-0.35
0.8
V
-1.1
±20 µA
-1
µA
520
700
mâ¦
950
S
170
25
pF
15
9
5.8
ns
32.7
20.3
-1.2
V
sales@zpsemi.com
www.zpsemi.com
2 of 2
|
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese