CJ3139KDW Datasheet, PDF (1/2 Pages) ZP Semiconductor – SOT-363 Plastic-Encapsulate MOSFETS

CJ3139KDW
SOT-363 Plastic-Encapsulate MOSFETS
CJ3139KDW Dual P-Channel Power MOSFET
GENERRAL DESCRIPTION
This Dual P-Channel MOSFET has been designed using advanced
Power Trench process to optimize the R_DS(ON).
Including two P-ch CJ3139K MOSFET (independently) in a package.
FEATURE
z High-Side Switching
z Low On-Resistance
z Low Threshold
z Fast Switching Speed
APPLICATION
z Drivers:Relays, Solenoids, Lamps, Hammers, Displays, Memories
z Battery Operated Systems
z Power Supply Converter Circuits
z Load/Power Switching Cell Phones, Pagers
MARKING: 39K
Maximum ratings (T_a=25℃ unless otherwise noted)
SOT-363
Parameter
Drain-Source voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current -Pulsed(note1)
Power Dissipation (note 2)
Thermal Resistance from Junction to Ambient
Storage Temperature
Junction Temperature
Symbol
V_DSS
V_GS
I_D(DC)
I_DM(pulse)
P_D
R_θJA
T_j
T_stg
Value
-20
±12
-0.66
-2.64
150
833
150
-55 ~+150
Units
V
A
mW
℃/W
℃
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