CJ2333 Datasheet, PDF (2/3 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

CJ2333
ELECTRICAL CHARACTERISTICS(T_a=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Static Characteristics
Drain-source breakdown voltage
V(BR)DSS VGS = 0V, ID =-250µA
Zero gate voltage drain current
Gate-body leakage current
Gate threshold voltage (note 1)
Drain-source on-resistance (note 1)
Forward tranconductance (note 1)
IDSS
IGSS
VGS(th)
RDS(on)
gFS
VDS =-12V,VGS = 0V
VGS =±8V, VDS = 0V
VDS =V_GS, ID =-250µA
VGS =-4.5V, ID =-5A
VGS =-3.7V, ID =-4.6A
VGS =-2.5V, ID =-4.3A
VGS =-1.8V, ID =-1A
VGS =-1.5V, ID =-0.5A
VDS =-5V, ID =-5A
Dynamic characteristics (note 2)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
C_iss
C_oss
C_rss
R_g
Q_g
Q_gs
Q_gd
td(on)
tr
td(off)
tf
VDS =-6V,VGS =0V,f =1MHz
f =1MHz
VDS =-6V,VGS =-4.5V,ID=-5A
V_DD=-6V,V_GEN=-4.5V,I_D=-4A
R_L=6Ω,R_GEN=1Ω
Source-Drain Diode characteristics
Diode forward current
I_S
T_C=25℃
Diode pulsed forward current
I_SM
Diode Forward voltage (note 1)
V_DS
VGS =0V, I_S=-4A
Diode reverse recovery time (note 2)
Diode reverse recovery charge (note 2)
t_rr
Q_rr
I_F=-4A,dI/dt=100A/µs
Notes : 1. Pulse test; pulse width≤300μs, duty cycle≤2%.
2. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
-12
V
-1
µA
±0.1 µA
-0.4
-1
V
28
32
40
mΩ
63
150
18
S
1275
pF
255
pF
236
pF
1.9
19
Ω
14
21
nC
2.3
nC
3.6
nC
26
40
ns
24
40
ns
45
70
ns
20
35
ns
-1.4
A
-20
A
-1.2
V
24
48
ns
8
16
nC
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