CJ2333 Datasheet, PDF (1/3 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

CJ2333
SOT-23 Plastic-Encapsulate MOSFETS
CJ2333 P-Channel MOSFET
SOT-23
DESCRIPTION
The CJ2333 uses advanced trench technology and design to
provide excellent R_DS(on) with low gate charge.This device is suitable
for use in PWM,load switching and general purpose applications.
1. GATE
2. SOURCE
3. DRAIN
FEATURE
 TrenchFET Power MOSFET
APPLICATION
 DC/DC Converter
 Load Switch for Portable Devices
 Battery Switch
MARKING: S33
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Value
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current (t=300µs)
I_DM
Power Dissipation
P_D
Thermal Resistance from Junction to Ambient
R_θJA
-12
±8
-6 ^a
-20
0.35 ^b
1.1^a
357 ^b
113 ^a
Junction Temperature
Storage Temperature
T_J
T_STG
150
-55~ +150
a. Device mounted on FR-4 substrate board, with minimum recommended pad layout, single side.
b. Device mounted on no heat sink.
Unit
V
V
A
A
W
W
℃/W
℃/W
℃
℃
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