CJ2301S Datasheet, PDF (2/3 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS

CJ2301S
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Static
Drain-source breakdown voltage
Gate-source threshold voltage
Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance ^a
Forward transconductance ^a
Dynamic^b
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Symbol Test Condition
V(BR)DSS
VGS(th)
I_GSS
I_DSS
RDS(on)
g_fs
VGS = 0V, ID =-250µA
VDS =V_GS, ID =-250µA
VDS =0V, VGS =±8V
VDS =-20V, VGS =0V
VGS =-4.5V, ID =-2.8A
VGS =-2.5V, ID =-2.0A
VDS =-5V, ID =-2.8A
C_iss
C_oss
VDS =-10V,VGS =0V,f =1MHz
C_rss
VDS =-10V,VGS =-4.5V,ID =-3A
Q_g
Gate-source charge
Q_gs
Gate-drain charge
Q_gd
Gate resistance
R_g
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Drain-source body diode characteristics
VDS =-10V,VGS =-2.5V,ID =-3A
f =1MHz
V_DD=-10V,
R_L=10Ω, ID =-1A,
V_GEN=-4.5V,Rg=1Ω
Continuous source-drain diode current
I_S
T_C=25℃
Pulse diode forward current ^a
I_SM
Body diode voltage
V_SD
I_S=-0.7A
Notes :
a.Pulse Test : Pulse Width < 300µs, Duty Cycle ≤2%.
b.Guaranteed by design, not subject to production testing.
Min Typ Max Units
-20
V
-0.4
-1
±100 nA
-1
µA
0.090 0.112
Ω
0.110 0.142
4.0
S
405
75
pF
55
5.5
10
3.3
6
nC
0.7
1.3
6.0
Ω
11
20
35
60
ns
30
50
10
20
-1.3
A
-10
-0.8 -1.2
V
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