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CJ2301S Datasheet, PDF (1/3 Pages) ZP Semiconductor – SOT-23 Plastic-Encapsulate MOSFETS
CJ2301S
SOT-23 Plastic-Encapsulate MOSFETS
CJ2301S P-Channel 20-V(D-S) MOSFET
FEATURE
TrenchFET Power MOSFET
APPLICATIONS
zLoad Switch for Portable Devices
zDC/DC Converter
MARKING: S1
SOT-23
1. GATE
2. SOURCE
3. DRAIN
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ=150℃)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Maximum Power Dissipation
Thermal Resistance from Junction to Ambient(t ≤ 5s)
Junction Temperature
Storage Temperature
VDS
VGS
ID
IDM
IS
PD
RθJA
TJ
Tstg
Value
-20
±8
-2.3
-10
-0.72
0.35
357
150
-55 ~+150
Unit
V
A
W
℃/W
℃
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