MMBT3906 Datasheet, PDF (5/5 Pages) NXP Semiconductors – PNP switching transistor

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MMBT3906
2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.1
TYPICAL STATIC CHARACTERISTICS
TJ = +125^oC
TJ = +25^oC
TJ = -55^oC
VCE=1.0V
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
20 30
50 70 100
200
IC, COLLECTOR CURRENT ( mA )
Figure 13. DC Current Gain
1.0
0.8
0.6
0.4
0.2
0
0.01
IC = 1.0 mA
10 mA
30 mA
0.02 0.03
0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT ( mA )
Figure 14. Collector Saturation Region
TJ = 25^oC
100 mA
2.0 3.0
5.0 7.0 10
1.0
VBE(sat) @ IC/IB=10
0.8
VBE @ ICE=1.0 V
0.6
0.4
0.2
VCE(sat) @ IC/IB=10
0
1.0 2.0
5.0
10
20
50 100 200
IC, COLLECTOR CURRENT ( mA )
Figure 17. " ON " Voltage
1.0
0.5
VC FOR VCE(sat)
0
-0.5
-1.0
-1.5
VB FOR VBE(sat)
+25^oC to +125^oC
-55^oC to +25^oC
-55^oC to +25^oC
+25^oC to +125^oC
-2.0
0
20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT ( mA )
Figure 16. Temperature Coefficients
REV. : 0
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