MMBT3906 Datasheet, PDF (1/5 Pages) NXP Semiconductors – PNP switching transistor

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General Purpose Transistor
NPN Silicon
MMBT3906
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
3
1
2
SOT-23
Symbol
VCEO
VCBO
VEBO
IC
COLLECTOR
3
BASE
1
2
EMITTER
Value
-40
-40
-5.0
-200
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board⁽¹⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,⁽²⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R JA
PD
R JA
TJ,TSTG
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW / ^oC
o_{C / W}
mW
mW / ^oC
o_{C / W}
o_C
DEVICE MARKING
MMBT3906=2A
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage⁽³⁾
( IC=1.0mAdc, IB=0 )
V(BR)CEO
-40
-
Vdc
Collector-Base Breakdowe Voltage
( IC= -10 uAdc, IE=0 )
Emitter-Base Breakdowe Voltage
( IE= -10 uAdc, IC=0 )
Base Cutoff Current
( VCE= -30 Vdc, VEB= -3.0 Vdc )
Collector Cutoff Current
( VCE= -30 Vdc, VEB= -3.0 Vdc )
V(BR)CBO
-40
V(BR)EBO
-5.0
IBL
-
ICEX
-
-
Vdc
-
Vdc
-50
nAdc
-50
nAdc
REV. : 0
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