MMBTA93 Datasheet, PDF (2/3 Pages) Zowie Technology Corporation – HIGH VOLTAGE TRANSISTOR PNP SILICON

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ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted) (Continued)
Characteristic
Symbol
Min.
ON CHARACTERISTICS ⁽³⁾
DC Current Gain
( IC= -1.0 mAdc, VCE= -10 Vdc )
( IC= -10 mAdc, VCE= -10 Vdc )
( IC= -30 mAdc, VCE= -10 Vdc )
25
HFE
40
25
Collector-Emitter Saturation Voltage
( IC= -20 mAdc, IB= -2.0 mAdc )
VCE(sat)
-
Base-Emitter Saturation Voltage
( IC= -20 mAdc, IB= -2.0 mAdc )
VBE(sat)
-
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( IC= -10 mAdc, VCE= -20 Vdc, f=100 MHZ )
Collector-Base Capacitance
( VCB= -20 Vdc, IE=0, f=1.0 MHZ )
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
fT
50
Ccb
-
Max.
-
-
-
-0.5
-0.9
-
8.0
Unit
-
Vdc
Vdc
MHZ
pF
REV. : 0
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