MMBTA93 Datasheet, PDF (1/3 Pages) Zowie Technology Corporation – HIGH VOLTAGE TRANSISTOR PNP SILICON

Zowie Technology Corporation
High Voltage Transistor
PNP Silicon
MMBTA93
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
3
1
2
SOT-23
COLLECTOR
3
BASE
1
2
EMITTER
Symbol
VCEO
VCBO
VEBO
IC
Value
-200
-200
-5.0
-500
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board⁽¹⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,⁽²⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R JA
PD
R JA
TJ,TSTG
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW / ^oC
o_{C / W}
mW
mW / ^oC
o_{C / W}
o_C
DEVICE MARKING
MMBTA92=2D
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage⁽³⁾
( IC= -1.0mAdc, IB=0 )
V(BR)CEO
Collector-Base Breakdowe Voltage
( IC= -100uAdc, IE=0 )
V(BR)CBO
Emitter - Base Breakdowe Voltage
( IE= -100 uAdc, IC=0 )
V(BR)EBO
Collector Cutoff Current
( VCE= -160 Vdc, IE = 0 )
ICBO
Emitter Cutoff Curretn
( VEB= -3.0 Vdc, IC=0 )
IEBO
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300 uS, Duty Cycle 2.0%.
Min.
-200
-200
-5.0
-
-
Max.
Unit
-
-
-
-0.25
-0.1
Vdc
Vdc
Vdc
uAdc
uAdc
REV. : 0
Zowie Technology Corporation