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MMBT5550G Datasheet, PDF (2/4 Pages) Zowie Technology Corporation – High Voltage Transistors
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Zowie Technology Corporation
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
ON CHARACTERISTICS
DC Current Gain
(I C = 1.0 mAdc, V CE = 5.0 Vdc)
(I C = 10 mAdc, V CE = 5.0 Vdc)
(I C = 50 mAdc, V CE = 5.0Vdc)
MMBT5550G
MMBT5551G
MMBT5550G
MMBT5551G
MMBT5550G
MMBT5551G
hFE
60
80
60
80
20
30
Collector–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
Both Types
VCE(sat)
—
(I C = 50 mAdc, I B = 5.0 mAdc )
Base–Emitter Saturation Voltage
(I C = 10 mAdc, I B = 1.0 mAdc)
MMBT5550G
MMBT5551G
Both Types
—
—
V BE(sat)
—
(I C = 50 mAdc, I B = 5.0 mAdc)
MMBT5550G
—
MMBT5551G
—
Max Unit
––
—
—
250
250
—
—
Vdc
0.15
0.25
0.20
Vdc
1.0
1.2
1.0
REV. 0
Zowie Technology Corporation
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