MMBT5550G Datasheet, PDF (1/4 Pages) Zowie Technology Corporation – High Voltage Transistors

Zowie Technology Corporation
High Voltage Transistors
Lead free product
FEATURE
ƽ We declare that the material of product
compliance with RoHS requirements.
MMBT5550G
MMBT5551G
3
1
2
SOT-23
1
BASE
3
COLLECTOR
2
EMITTER
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Symbol
V CEO
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Continuous I C
Value
140
160
6.0
600
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) TA = 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
Symbol
PD
RθJA
PD
RθJA
TJ , Tstg
Max
Unit
225
mW
1.8
mW/°C
556
°C/W
300
mW
2.4
417
–55 to +150
mW/°C
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
V (BR)CEO
(I C = 1.0 mAdc, I B = 0)
MMBT5550G
140
MMBT5551G
160
Collector–Base Breakdown Voltage
V (BR)CBO
(I C = 100 µAdc, I E = 0)
MMBT5550G
160
MMBT5551G
180
Emitter–Base Breakdown Voltage
(I E = 10 µAdc, I C = 0)
V (BR)EBO
6.0
Collector Cutoff Current
( V CB = 100Vdc, I E = 0)
MMBT5550G
I CBO
—
( V CB = 120Vdc, I E = 0)
MMBT5551G
—
( V CB = 100Vdc, I E = 0, T A=100 °C)
MMBT5550G
—
( V CB = 120Vdc, I E = 0, T A=100 °C)
MMBT5551G
—
Emitter Cutoff Current
( V BE = 4.0Vdc, I C= 0)
I EBO
—
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%.
Max
—
—
—
—
—
100
50
100
50
50
REV. 0
Unit
Vdc
Vdc
Vdc
nAdc
µAdc
nAdc
Zowie Technology Corporation