MMBT3906G Datasheet, PDF (2/5 Pages) Zowie Technology Corporation – General Purpose Transistor PNP Silicon Lead free product

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ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS⁽³⁾
Symbol
Min.
DC Current Gain
( IC= -0.1 mAdc, VCE= -1.0 Vdc )
( IC= -1.0 mAdc, VCE= -1.0 Vdc )
( IC= -10 mAdc, VCE= -1.0 Vdc )
( IC= -50 mAdc, VCE= -1.0 Vdc )
( IC= -100 mAdc, VCE= -1.0 Vdc )
60
80
HFE
100
60
30
Collector-Emitter Saturation Voltage⁽³⁾
( IC= -10 mAdc, IB=-1.0 mAdc )
( IC= -50 mAdc, IB= -5.0 mAdc )
VCE(sat)
-
-
Base-Emitter Saturation Voltage⁽³⁾
( IC= -10 mAdc, IB= -1.0 mAdc )
( IC= -50 mAdc, IB= -5.0 mAdc )
VBE(sat)
-0.65
-
SMALL-SIGNAL CHARACTERISTIC
Current-Gain-Bandwidth Product
( IC= -10 mAdc, VCE= -20 Vdc, f=100 MHZ )
Output Capacitance
( VCB= -5.0 Vdc, IE=0, f=1.0 MHZ )
fT
250
Cobo
-
Input Capacitance
( VEB= -0.5 Vdc, IC=0, f=1.0 MHZ )
Input Impedance
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ )
Voltage Feedback Ratio
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ )
Small-Signal Current Gain
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ )
Output Admittance
( VCE= -10 Vdc, IC= -1.0 mAdc, f=1.0 kHZ )
Noise Figure
( VCE= -5.0 Vdc, IC= -100 uAdc, RS=1.0 k ohm, f=1.0 kHZ )
Cibo
-
hie
2.0
hre
0.1
hfe
100
hoe
3.0
NF
-
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
( VCC= -3.0 Vdc, VBE= -0.5 Vdc,
IC= -10 mAdc, IB1= -1.0 mAdc )
Storage Time
Fall Time
( VCC= -3.0 Vdc,
IC= -10 mAdc, IB1=IB2= -1.0 mAdc )
(1) FR-5=1.0 x 0.75 x 0.062in.
(2) Alumina=0.4 x 0.3 x 0.024in. 99.5% alumina.
(3) Pulse Test : Pulse Width 300uS, Duty Cycle 2.0%.
REV. 0
td
-
tr
-
ts
-
tf
-
Max.
Unit
-
-
300
-
-
-
-0.25
Vdc
-0.4
-0.85
Vdc
-0.95
-
MHZ
4.5
pF
10
pF
12
k ohms
10
X 10^-4
400
-
60
u mhos
4.0
dB
35
nS
35
225
nS
75
Zowie Technology Corporation