MMBT3906G Datasheet, PDF (1/5 Pages) Zowie Technology Corporation – General Purpose Transistor PNP Silicon Lead free product

Zowie Technology Corporation
General Purpose Transistor
PNP Silicon
Lead free product
3
MMBT3906G
1
2
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
SOT-23
Symbol
VCEO
VCBO
VEBO
IC
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board⁽¹⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Total Device Dissipation Alumina Substrate,⁽²⁾ TA=25^oC
Derate above 25^oC
Thermal Resistance Junction to Ambient
Junction and Storage Temperature
Symbol
PD
R JA
PD
R JA
TJ,TSTG
DEVICE MARKING
MMBT3906=2A
ELECTRICAL CHARACTERISTICS (TA=25^oC unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdowe Voltage⁽³⁾
( IC=1.0mAdc, IB=0 )
V(BR)CEO
Collector-Base Breakdowe Voltage
( IC= -10 uAdc, IE=0 )
Emitter-Base Breakdowe Voltage
( IE= -10 uAdc, IC=0 )
Base Cutoff Current
( VCE= -30 Vdc, VEB= -3.0 Vdc )
Collector Cutoff Current
( VCE= -30 Vdc, VEB= -3.0 Vdc )
V(BR)CBO
V(BR)EBO
IBL
ICEX
COLLECTOR
3
BASE
1
2
EMITTER
Value
-40
-40
-5.0
-200
Unit
Vdc
Vdc
Vdc
mAdc
Max.
225
1.8
556
300
2.4
417
-55 to +150
Unit
mW
mW / ^oC
o_{C / W}
mW
mW / ^oC
o_{C / W}
o_C
Min.
Max.
Unit
-40
-
Vdc
-40
-
Vdc
-5.0
-
Vdc
-
-50
nAdc
-
-50
nAdc
REV. 0
Zowie Technology Corporation