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| ZXTDE4M832 Datasheet, PDF (6/8 Pages) Zetex Semiconductors – DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION | |||
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ZXTDE4M832
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
Collector-Base Breakdown
Voltage
V(BR)CBO
Collector-Emitter Breakdown
Voltage
V(BR)CEO
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
fT
Cobo
t(on)
t(off)
MIN.
-70
-70
-7.5
300
300
175
40
150
TYP.
-150
MAX. UNIT
V
CONDITIONS.
IC=-100â®A
-125
V IC=-10mA*
-8.5
-35
-135
-140
-175
0.94
0.78
470
450
275
60
10
180
14
40
700
-25
-25
-25
-50
-200
-220
-260
1.05
1.00
20
V
nA
nA
nA
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
IE=-100â®A
VCB=-55V
VEB=-6V
VCE=-55V
IC=-0.1A, IB=-10mA*
IC=-0.5A, IB=-20mA*
IC=-1.0A, IB=-100mA*
IC=-1.5A, IB=-200mA*
IC=-1.5A, IB=-200mA*
IC=-1.5A, VCE=-5V*
IC=-10mA, VCE=-5V*
IC=-100mA, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-1.5A, VCE=-5V*
IC=-3A, VCE=-5V*
IC=-50mA, VCE=-10V
f=100MHz
VCB=-10V, f=1MHz
VCC=-50V, IC=-1A
IB1=IB2=-50mA
*Measured under pulsed conditions.
ISSUE 1 - JUNE 2002
6
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