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| ZXTDE4M832 Datasheet, PDF (4/8 Pages) Zetex Semiconductors – DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION | |||
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ZXTDE4M832
NPN TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
Collector-Base Breakdown
Voltage
V(BR)CBO
Collector-Emitter Breakdown
Voltage
V(BR)CEO
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
fT
Cobo
t(on)
t(off)
MIN.
100
80
7.5
200
300
110
60
20
100
TYP.
180
MAX. UNIT
V
CONDITIONS.
IC=100â®A
110
V IC=10mA*
8.2
15
45
145
160
240
1.09
0.96
450
450
170
90
30
10
160
11.5
86
1128
25
25
25
20
60
185
200
325
1.175
1.05
900
18
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
MHz
pF
ns
ns
IE=100â®A
VCB=80V
VEB=6V
VCE=65V
IC=0.1A, IB=10mA*
IC=0.5A, IB=50mA*
IC=1A, IB=20mA
IC=1.5A, IB=50mA
IC=3.5A, IB=300mA
IC=3.5A, IB=300mA*
IC=3.5A, VCE=2V*
IC=10mA, VCE=2V*
IC=200mA, VCE=2V*
IC=1A, VCE=2V*
IC=1.5A, VCE=2V*
IC=3A, VCE=2V*
IC=5A, VCE=2V*
IC=50mA, VCE=10V
f=100MHz
VCB=10V, f=1MHz
VCC=10V, IC=1A
IB1=IB2=25mA
*Measured under pulsed conditions.
ISSUE 1 - JUNE 2002
4
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