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| ZXTD4591AM832 Datasheet, PDF (6/8 Pages) Zetex Semiconductors – COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR | |||
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ZXTD4591AM832
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
Collector-Base Breakdown
Voltage
V(BR)CBO
Collector-Emitter Breakdown
Voltage
V(BR)CEO
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
V(BR)EBO
ICBO
IEBO
ICES
VCE(sat)
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
VBE(sat)
VBE(on)
hFE
Transition Frequency
Output Capacitance
fT
Cobo
MIN.
-40
-40
-5
300
300
250
160
30
150
TYP.
MAX. UNIT
V
CONDITIONS.
IC=-100â®A
V IC=-10mA*
-100
-100
-100
-200
-350
-500
-1.1
-1.0
800
10
V
nA
nA
nA
mV
mV
mV
V
V
MHz
pF
IE=-100â®A
VCB=-30V
VEB=-4V
VCE=-30V
IC=-0.1A, IB=-1mA*
IC=-0.5A, IB=-20mA*
IC=-1A, IB=-100mA*
IC=-1A, IB=-50mA*
IC=-1A, VCE=-5V*
IC=-1mA, VCE=-5V*
IC=-0.1A, VCE=-5V*
IC=-0.5A, VCE=-5V*
IC=-1A, VCE=-5V*
IC=-2A, VCE=-5V*
IC=-50mA, VCE=-10V
f=100MHz
VCB=-10V, f=1MHz
*Measured under pulsed conditions.
ISSUE 1 - JUNE 2002
6
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